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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION *With TO-247 package *Switching power transistor *High breakdown voltage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 10 4 100 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.25 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3164 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated voltage IC=5A ; VCE=2V IC=1A ; VCE=10V 10 20 MHz 0.1 mA 0.1 mA CONDITIONS IC=0.2A; IB=0 IC=5A ;IB=1A IC=5A ;IB=1A MIN 400 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Switching times ton ts tf Turn-on time Storage time Fall time IC=5A;IB1=1A; IB2=2A , RL=30A VBB2=4V 0.3 1.0 0.1 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3164 Fig.2 Outline dimensions 3 |
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